Browsing by author "Kim, Daeyong"
Now showing items 1-4 of 4
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1.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation
Yu, Hao; Schaekers, Marc; Rosseel, Erik; Peter, Antony; Lee, Joon-Gon; Song, Woo-Bin; Demuynck, Steven; Chiarella, Thomas; Ragnarsson, Lars-Ake; Kubicek, Stefan; Everaert, Jean-Luc; Horiguchi, Naoto; Barla, Kathy; Kim, Daeyong; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2015) -
A new direction for III-V FETs for mobile CPU operation uncluding burst-mode: In0.35Ga0.65As channel
Rakshit, T.; Obradovic, B.; Wang, W.-E.; Kim, Weon Hong; Shin, Keo Myoung; Baek, Seongcheol; Lee, Sung Woo; Kim, S.-H.; Lee, J.-M.; Kim, Daeyong; Hoover, A.; Song, W.-B.; Cantoro, M.; Heo, Y.-C.; Rooyackers, Rita; Ardila, S.C.; Vais, Abhitosh; Lin, Dennis; Collaert, Nadine; Rodder, M.S. (2017) -
Titanium silicide on Si:P with precontact amorphization implantation treatment: contact resistivity approaching 1×10-9 Ohm-cm²
Yu, Hao; Schaekers, Marc; Peter, Antony; Pourtois, Geoffrey; Rosseel, Erik; Lee, Joon-Gon; Song, Woo-Bin; Shin, Keo Myoung; Everaert, Jean-Luc; Chew, Soon Aik; Demuynck, Steven; Kim, Daeyong; Barla, Kathy; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Collaert, Nadine; De Meyer, Kristin (2016) -
Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation
Yu, Hao; Schaekers, Marc; Hikavyy, Andriy; Rosseel, Erik; Peter, Antony; Hollar, K.; Khaja, Fareen; Aderhold, W.; Date, Lucien; Mayur, A.J.; Lee, J.G.; Shin, Keo Myoung; Douhard, Bastien; Chew, Soon Aik; Demuynck, Steven; Kubicek, Stefan; Kim, Daeyong; Mocuta, Anda; Barla, Kathy; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016)