Browsing by author "Vandooren, Anne"
Now showing items 1-20 of 140
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3D sequential CMOS top tier devices demonstration using a low temperature Smart Cu (TM) Si layer transfer
Besnard, Guillaume; Radu, Ionut; Vandooren, Anne; Wu, Zhicheng; Franco, Jacopo; Li, Waikin; Arimura, Hiroaki; Mannaert, Geert; Rosseel, Erik; Hikavyy, Andriy; Dentoni Litta, Eugenio; Horiguchi, Naoto (2021) -
3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters
Vandooren, Anne; Wu, Zhicheng; Parihar, Narendra; Franco, Jacopo; Parvais, Bertrand; Matagne, Philippe; Debruyn, Haroen; Mannaert, Geert; Devriendt, Katia; Teugels, Lieve; Vecchio, Emma; Radisic, Dunja; Rosseel, Erik; Hikavyy, Andriy; Chan, BT; Waldron, Niamh; Mitard, Jerome; Besnard, G.; Alvarez, A.; Gaudin, G.; Schwarzenbach, W.; Radu, I.; Nguyen, B. Y.; Huet, K.; Tabata, T.; Mazzamuto, F.; Demuynck, Steven; Boemmels, Juergen; Collaert, Nadine; Horiguchi, Naoto (2020) -
3D sequential stacked planar devices featuring low-temperature replacement metal gate junctionless top devices with improved reliability
Vandooren, Anne; Franco, Jacopo; Parvais, Bertrand; Wu, Zhicheng; Witters, Liesbeth; Walke, Amey; Li, Waikin; Peng, Lan; Deshpande, Veeresh Vidyadhar; Bufler, Fabian; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Verbinnen, Greet; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Tao, Zheng; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Ritzenthaler, Romain; Besnard, Guillaume; Schwarzenbach, Walter; Gaudin, Gweltaz; Radu, Ionut; Nguyen, Bich-Yen; Waldron, Niamh; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018-11) -
3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability
Vandooren, Anne; Franco, Jacopo; Parvais, Bertrand; Wu, Zhicheng; Witters, Liesbeth; Walke, Amey; Li, Waikin; Peng, Lan; Deshpande, Veeresh Vidyadhar; Bufler, Fabian; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Verbinnen, Greet; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Tao, Zheng; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Ritzenthaler, Romain; Besnard, Guillaume; Schwarzenbach, Walter; Gaudin, Gweltaz; Radu, Ionut; Nguyen, Bich-Yen; Waldron, Niamh; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018) -
3D technologies for analog/RF applications
Vandooren, Anne; Parvais, Bertrand; Witters, Liesbeth; Walke, Amey; Vais, Abhitosh; Merckling, Clement; Lin, Dennis; Waldron, Niamh; Wambacq, Piet; Mocuta, Dan; Collaert, Nadine (2017) -
A 35nm diameter vertical silicon nanowire short-gate tunnelFET
Vandooren, Anne; Rooyackers, Rita; Leonelli, Daniele; Iacopi, Francesca; De Gendt, Stefan; Verhulst, Anne; Heyns, Marc; Kunnen, Eddy; Nguyen, Duy; Demand, Marc; Ong, Patrick; Lee, Willie; Moonens, Jos; Richard, Olivier; Vandenberghe, William; Groeseneken, Guido (2009) -
A new complementary hetero-junction vertical tunnel-FET integration scheme
Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Walke, A.; Devriendt, Katia; Locorotondo, Sabrina; Demand, Marc; Bryce, George; Loo, Roger; Hikavyy, Andriy; Vandeweyer, Tom; Huyghebaert, Cedric; Collaert, Nadine; Thean, Aaron (2013) -
A simulation study on process sensitivity of a line tunnel field-effect transistor
Walke, Amey; Vandenberghe, William; Kao, Frank; Vandooren, Anne; Groeseneken, Guido (2013) -
Advanced semiconductor devices for future CMOS technologies
Claeys, Cor; Chiappe, Daniele; Collaert, Nadine; Mitard, Jerome; Radu, Iuliana; Rooyackers, Rita; Simoen, Eddy; Vandooren, Anne; Veloso, Anabela; Waldron, Niamh; Witters, Liesbeth; Thean, Aaron (2015) -
AFM-based tomography for probing the electrical properties in confined volumes at the nanometer scale
Schulze, Andreas; Hantschel, Thomas; Eyben, Pierre; Verhulst, Anne; Rooyackers, Rita; Vandooren, Anne; Mody, Jay; Vandervorst, Wilfried (2013) -
Analog parameters of solid source Zn diffusion InXGa1-XAs nTFETs down to 10K
Mendes Bordallo, Caio Cesar; Martino, Joao Antonio; Agopian, Paula Ghedini; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Smets, Quentin; Simoen, Eddy; Claeys, Cor; Collaert, Nadine (2016) -
Analog performance of vertical nanowireTFETs as a function of temperature and transport mechanism
Dalle Valle Martino, Marcio; Neves Souza, Felipe; Ghedini der Agopian, Paula; Martino, Joao Antonio; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2015) -
Analysis of analog parameters on in NW-TFETs with Si and SiGe source composition for at high temperatures
Bordallo, Caio; Martino, Joao A.; Agopian, Paula; Rooyackers, Rita; Vandooren, Anne; Thean, Aaron; Simoen, Eddy; Claeys, Cor (2015) -
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
Martino, Marcio D.V.; Martino, Joao A.; Agopian, Paula G.D.; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Claeys, Cor (2017) -
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures
Bordallo, Caio; Martino, J.A.; Agopian, P.G.D.; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Simoen, Eddy; Claeys, Cor; Collaert, Nadine (2017) -
Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction tunnel-FETs
Vandooren, Anne; Rooyackers, Rita; Leonelli, Daniele; Hikavyy, Andriy; Devriendt, Katia; Demand, Marc; Loo, Roger; Groeseneken, Guido; Huyghebaert, Cedric (2013) -
Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking
Franco, Jacopo; de Marneffe, Jean-Francois; Vandooren, Anne; Kimura, Yosuke; Nyns, Laura; Wu, Zhicheng; El-Sayed, A-M; Jech, M.; Waldhoer, D.; Claes, Dieter; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Afanas'ev, V.; Stesmans, A.; Horiguchi, Naoto; Linten, Dimitri; Grasser, T.; Kaczer, Ben (2020) -
Back bias influence on analog performance of pTFET
Agopian, P.G.D.; Neves, F.S.; Martino, J.A.; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Claeys, Cor (2013) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
Boosting the on-current of Si-based tunnel field-effect transistors
Verhulst, Anne; Vandenberghe, William; Leonelli, Daniele; Rooyackers, Rita; Vandooren, Anne; Pourtois, Geoffrey; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2010)