Browsing by author "Vandooren, Anne"
Now showing items 21-40 of 139
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Boosting the on-current of Si-based tunnel field-effect transistors
Verhulst, Anne; Vandenberghe, William; Leonelli, Daniele; Rooyackers, Rita; Vandooren, Anne; Pourtois, Geoffrey; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2010) -
BTI reliability improvement strategies in low thermal budget gate dtacks for 3D sequential integration
Franco, Jacopo; Wu, Zhicheng; Rzepa, Gerhard; Vandooren, Anne; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Hellings, Geert; Brus, Stephan; Cott, Daire; De Heyn, Vincent; Groeseneken, Guido; Horiguchi, Naoto; Ryckaert, Julien; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2018-12) -
Buried metal line compatible with 3D sequential integration for top tier planar devices dynamic Vth tuning and RF shielding applications
Vandooren, Anne; Wu, Zhicheng; Khaled, Ahmad; Franco, Jacopo; Parvais, Bertrand; Li, W.; Witters, Liesbeth; Walke, Amey; Peng, Lan; Rassoul, Nouredine; Matagne, Philippe; Jamieson, Geraldine; Inoue, Fumihiro; Nguyen, B.Y.; Debruyn, Haroen; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Zheng, T.; Radisic, Dunja; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Besnard, G.; Schwarzenbach, W.; Gaudin, G.; Radu, Iuliana; Waldron, Niamh; De Heyn, Vincent; Demuynck, Steven; Boemmels, Juergen; Ryckaert, Julien; Collaert, Nadine; Mocuta, Dan (2019) -
Characterization of nanodevices by STEM tomography
Richard, Olivier; Vandooren, Anne; Kar, Gouri Sankar; Van Marcke, Patricia; Bender, Hugo (2011-11) -
Comparative study of vertical GAA TFETs and GAA MOSFETs in function of the inversion coefficient
Martino, Joao; Sivieri, Victor; Agopian, Paula; Rooyackers, Rita; Vandooren, Anne; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2016) -
Comparison between vertical silicon NW-TFET and NW-MOSFET from analog point of view
Agopian, P.G.D.; Martino, J.A.; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2015) -
Comparison of current mirrors designed with TFET and FinFET devices for different dimensions and temperatures
Martino, M.D.V.; Martino, J.A.; Agopian, P.G.D.; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2015) -
Detection of bonding voids for 3D integration
Chen, Cong; Van den Heuvel, Dieter; Beggiato, Matteo; Tunca Altintas, Bensu; Moussa, Alain; Vandooren, Anne; Baudemprez, Bart; Schobitz, Michael; Khaldi, Wassim; Bogdanowicz, Janusz; Beral, Christophe; Charley, Anne-Laure (2023) -
Diameter-dependent boron diffusion in silicon nanowire-based transistors
Schulze, Andreas; Florakis, Antonios; Hantschel, Thomas; Eyben, Pierre; Verhulst, Anne; Rooyackers, Rita; Vandooren, Anne; Vandervorst, Wilfried (2013) -
Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET Devices
Arimura, Hiroaki; Ragnarsson, Lars-Ake; Oniki, Yusuke; Franco, Jacopo; Vandooren, Anne; Brus, Stephan; Leonhardt, A.; Sippola, P.; Ivanova, T.; Verni, G. Alessio; Chang, R-J; Xie, Q.; Givens, M.; Mitard, Jerome; Biesemans, Serge; Dentoni Litta, Eugenio; Horiguchi, Naoto (2021) -
Direct comparison of Si/high-k and Si/SiO2 channels in advanced FD SOI MOSFETs
Pham-Nguyen, L.; Fenouillet-Beranger, C.; Vandooren, Anne; Wild, A.; Ghibaudo, G.; Cristoloveanu, S. (2008) -
Double-gate Si junction-less n-type transistor for high performance Cu-BEOL compatible applications using 3D sequential integration
Vandooren, Anne; Witters, Liesbeth; Vecchio, Emma; Kunnen, Eddy; Hellings, Geert; Peng, Lan; Inoue, Fumihiro; Li, Waikin; Waldron, Niamh; Mocuta, Dan; Collaert, Nadine (2017) -
Drive current enhancement in p-tunnel FETs by optimization of the process conditions
Leonelli, Daniele; Vandooren, Anne; Rooyackers, Rita; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2011) -
Drive current improvement in Si tunnel field effect transistors by means of silicide engineering
Leonelli, Daniele; Vandooren, Anne; Rooyackers, Rita; Verhulst, Anne; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2010) -
Early voltage and intrinsic voltage gain in vertical nanowire-TFETs as a function of temperature
Martino, Marcio; Neves Souza, Felipe; Agopian, Paula; Martino, Joao; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2014) -
Early voltage and transistor efficiency of pTFET compared to pFinFET devices
Agopian, Paula; Martino, Joo; Rooyackers, Rita; Vandooren, Anne; Simoen, Eddy; Claeys, Cor (2013) -
Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential Integration
Wu, Zhicheng; Franco, Jacopo; Vandooren, Anne; Roussel, Philippe; Kaczer, Ben; Linten, Dimitri; Collaert, Nadine; Groeseneken, Guido (2021) -
Electrical results of vertical Si N-tunnel FETs
Vandooren, Anne; Leonelli, Daniele; Rooyackers, Rita; Arstila, Kai; Groeseneken, Guido; Huyghebaert, Cedric (2011-09) -
Enabling UTBB Strained SOI Platform for Co-integration of Logic and RF: Implant-Induced Strain Relaxation and Comb-like Device Architecture
Sun, Chen; Liang, Jie; Xu, Haiwen; Kong, Eugene; Nguyen, Bich-Yen; Vandooren, Anne; Schwarzenbach, Walter; Maleville, Christophe; Barral, Vincent; Berthelon, Remy; Weber, Olivier; Arnaud, Franck; Thean, Aaron V. Y.; Gong, Xiao (2020) -
Enhancing the quality of low temperature SiO2 by atomic hydrogen exposure for excellent NBTI reliability
Franco, Jacopo; de Marneffe, Jean-Francois; Vandooren, Anne; Kimura, Yosuke; Nyns, Laura; Wu, Zhicheng; El-Sayed, Al-Moatasem; Jech, Markus; Waldhoer, Dominic; Claes, Dieter; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Afanas'ev, Valeri; Stesmans, Andre; Horiguchi, Naoto; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2020)