Browsing by author "Yoneoka, Masashi"
Now showing items 1-3 of 3
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Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs
Nakashima, Toshiyuki; Idemoto, Tatsuya; Tsunoda, Isao; Takakura, Kenichiro; Yoneoka, Masashi; Ohyama, Hidenori; Yoshino, Kenji; Simoen, Eddy; Claeys, Cor (2012) -
Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content
Nakashima, Toshiyuki; Yoneoka, Masashi; Tsunoda, Isao; Takakura, Kenichiro; Gonzalez, Mireia B; Simoen, Eddy; Claeys, Cor; Yoshino, Kenji (2013) -
Thermal recovery process of electron irradiated Si1-xCx source/drain n-MOSFETs
Takakura, Kenichiro; Mori, Masato; Yoneoka, Masashi; Tsunoda, Isao; Nakashima, Toshiyuki; Simoen, Eddy; Claeys, Cor (2015)