Browsing by author "Young, E."
Now showing items 1-6 of 6
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Compatibility of polysilicon with HfO2-based gate dielectrics for CMOS applications
Kaushik, V.; De Gendt, Stefan; Caymax, Matty; Young, E.; Röhr, Erika; Van Elshocht, Sven; Delabie, Annelies; Claes, Martine; Shi, Xiaoping; Chen, Jerry; Carter, Richard; Conard, Thierry; Vandervorst, Wilfried; Schaekers, Marc; Heyns, Marc (2003) -
Correlation between the l/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal-oxide-semiconductor field-effect transistors
Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor; Young, E. (2004) -
High-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologies
Caymax, Matty; Bender, Hugo; Brijs, Bert; Conard, Thierry; De Gendt, Stefan; Delabie, Annelies; Heyns, Marc; Onsia, Bart; Ragnarsson, Lars-Ake; Richard, Olivier; Vandervorst, Wilfried; Van Elshocht, Sven; Zhao, Chao; Maes, J.W.; Daté, L.; Pique, D.; Young, E.; Tsai, W.; Shimamoto, Y. (2003) -
In-line electrical metrology for high-k gate dielectrics deposited by atomic layer chemical vapour deposition
De Witte, Hilde; Maes, Jan; Passefort, S.; Besling, W.; Eason, K.; Young, E.; Rittersma, Chris; Heyns, Marc (2002-09) -
Low-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness
Simoen, Eddy; Mercha, Abdelkarim; Pantisano, Luigi; Claeys, Cor; Young, E. (2004) -
Low-frequency noise performance of HfO2-based gate stacks
Claeys, Cor; Simoen, Eddy; Mercha, Abdelkarim; Pantisano, Luigi; Young, E. (2005)