Browsing by author "Bougrioua, Zahia"
Now showing items 21-34 of 34
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Minority carrier diffusion lengths in silicon doped gallium nitride thin films measured by electron beam induced current
Grazzi, C.; Albrecht, M.; Strunk, H. P.; Bougrioua, Zahia; Moerman, Ingrid (2001) -
Mobilité dans GaN en présence de parois de dislocations
Farvacque, J. L.; Bougrioua, Zahia; Moerman, Ingrid (2001) -
Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
Bougrioua, Zahia; Farvacque, J. L.; Moerman, Ingrid; Demeester, Piet; Harris, J. J.; Lee, K.; Van Tendeloo, G.; Lebedev, O.; Thrush, E. J. (1999) -
Multiple parallel conduction paths observed in depth-profiled N-GaN epilayers
Mavroidis, C.; Harris, J. J.; Jackman, R. B.; Harrison, I.; Ansell, B. J.; Bougrioua, Zahia; Moerman, Ingrid (2002) -
Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
Stafford, A.; Irvine, S. J. C.; Bougrioua, Zahia; Jacobs, Koen; Moerman, Ingrid; Thrush, E. J.; Considine, L. (2000) -
Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry
Stafford, A.; Irvine, S. J. C.; Bougrioua, Zahia; Jacobs, Koen; Moerman, Ingrid; Thrush, E. J.; Considine, L.; Crawley., J. (2000) -
Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures
Harris, J. J.; Lee, K. J.; Wang, T.; Sakai, S.; Bougrioua, Zahia; Moerman, Ingrid; Thrush, E. J.; Webb, J. B.; Tang, H.; Martin, Tom; Maude, D. K.; Portal, J. C. (2001) -
Reliability of Schottky contacts on AlGaN
Monroy, E.; Calle, F.; Palacios, T.; Sánchez-Osorio, J.; Verdú, M.; Sánchez, F. J.; Montojo, M. T.; Omnès, F.; Bougrioua, Zahia; Moerman, Ingrid; Ruterana, P. (2001) -
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
Farvacque, J. L.; Bougrioua, Zahia; Moerman, Ingrid; Van Tendeloo, G.; Lebedev, O. (1999) -
Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers
Mavroidis, C.; Harris, J. J.; Lee, K.; Harrison, I.; Ansell, B. J.; Bougrioua, Zahia; Moerman, Ingrid (2001) -
Some considerations on the growth of highly resistive GaN layers
Bougrioua, Zahia; Jacobs, Koen; Cheyns, Jan; Moerman, Ingrid; Thruch, E. J.; Wallis, R. H.; Davies, R. A. (2001) -
Some considerations on the growth of highly resistive GaN layers
Bougrioua, Zahia; Jacobs, Koen; Cheyns, Jan; Moerman, Ingrid; Thruch, E. J.; Wallis, R. H.; Davies, R. A. (2000) -
Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE
Bougrioua, Zahia; Farvacque, J. L.; Moerman, Ingrid; Demeester, Piet; Harris, J. J.; Lee, K.; Van Tendeloo, G.; Lebedev, O.; Thrush, E. J. (1999) -
Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls
Farvacque, J. L.; Bougrioua, Zahia; Moerman, Ingrid (2000)