Browsing by author "Dhayalan, Sathish Kumar"
Now showing items 21-25 of 25
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On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films
Dhayalan, Sathish Kumar; Kujala, Jiri; Slotte, Jonatan; Pourtois, Geoffrey; Simoen, Eddy; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Iacovo, Serena; Stesmans, Andre; Loo, Roger; Vandervorst, Wilfried (2016) -
Pre-Epi Clean of SiGe 20%: GeH4 and HCl vs H2-based in-situ cleaning
Wostyn, Kurt; Dhayalan, Sathish Kumar; Gencarelli, Federica; Masaoku, Toru; Iino, Hideaki; Yoshida, Yukifumi; Komori, Kana; Douhard, Bastien; Hikavyy, Andriy; Loo, Roger; Holsteyns, Frank (2018-05) -
Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs
Rosseel, Erik; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Loo, Roger; Profijt, Harald; Kohen, David; Kubicek, Stefan; Chiarella, Thomas; Yu, Hao; Horiguchi, Naoto; Mocuta, Dan; Barla, Kathy; Thean, Aaron; Bartlett, Greg; Margetis, Joe; Bhargava, Naipur; Tolle, John (2016) -
Study of electrically active defects in epitaxial layers on silicon
Simoen, Eddy; Dhayalan, Sathish Kumar; Jayachandran, Suseendran; Gupta, Somya; Gencarelli, Federica; Hikavyy, Andriy; Loo, Roger; Rosseel, Erik; Delabie, Annelies; Caymax, Matty; Langer, Robert; Barla, Kathy; Vrielinck, Henk; Lauwaert, Johan (2016) -
Substitutional carbon loss in Si:C stressor layers probed by Deep-Level Transient Spectroscopy
Simoen, Eddy; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Loo, Roger; Rosseel, Erik; Vrielinck, Hemk; Lauwaert, Johan (2016)