Browsing by author "Clauws, P."
Now showing items 21-40 of 70
-
DLTS studies of high-temperature electron irradiated Cz n-Si
Neimash, V.; Kras'ko, M.; Kraitchinskii, A.; Voytivych, V.; Tishenko, V.; Simoen, Eddy; Rafi, Joan Marc; Claeys, Cor; Versuys, J.; De Gryse, O.; Clauws, P. (2004) -
DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon
Huang, Y.L.; Simoen, Eddy; Claeys, Cor; Job, R.; Ma, Y.; Düngen, W.; Fahrner, W.R.; Versluys, J.; Clauws, P. (2005) -
Electronic properties of titanium and chromium impurity centers in germanium
Lauwaert, J.; Van Gheluwe, J.; Vanhellemont, Jan; Simoen, Eddy; Clauws, P. (2009) -
Field-enhanced electron capture for iron impurities in germanium
Lauwaert, J.; Segers, S.; Simoen, Eddy; Depla, D.; Vanhellemont, J.; Clauws, P.; Callens, F.; Vrielinck, H. (2011) -
Germanium Content Dependence of Radiation Damage in Electron-Irradiated Strained Si1-xGex Epitaxial Devices
Ohyama, Hidenori; Vanhellemont, Jan; Sunaga, H.; Poortmans, Jef; Caymax, Matty; Clauws, P. (1994) -
Grown-in lattice defects and diffusion in czochralski-grown germanium
Vanhellemont, J.; De Gryse, O.; Hens, S.; Vanmeerbeek, P.; Poelman, D.; Clauws, P.; Simoen, Eddy; Claeys, Cor; Romandic, I.; Theuwis, A.; Raskin, G.; Vercammen, H.; Mijlemans, P. (2004) -
High-energy proton radiation induced defects in tin-doped N- tType sSilicon
Simoen, Eddy; Claeys, C.; Privitera, Vittorio; Coffa, S.; Larsen, A. N.; Clauws, P. (2001) -
High-temperature electron-irradiation induced deep levels in n-type Cz silicon
Simoen, Eddy; Claeys, Cor; Neimash, V.; Kraitchinskii, A.; Kras'ko, M.; Tischenko, V.; Voitovych, V.; Versluys, J.; Clauws, P. (2003) -
Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon
Simoen, Eddy; Claeys, Cor; Job, R.; Ulyashin, A.G.; Fahrner, W.R.; De Gryse, O.; Clauws, P. (2002) -
Hydrogen-induced thermal donor formation in n-type oxygenated high-resistivity FZ silicon
Rafi, Joan Marc; Simoen, Eddy; Claeys, Cor; Ulyashin, A.G.; Job, R.; Fahrner, W.R.; Versluys, J.; Clauws, P.; Lozano, M.; Martinez, C.; Campabadal, F. (2002) -
Hydrogen-plasma-enhanced thermal donor formation in n-type high-ressitivity MCZ silicon
Simoen, Eddy; Huang, Y.L.; Claeys, Cor; Rafi, J.M.; Job, R.; Fahrner, W.R.; Versluijs, Janko; Clauws, P. (2005) -
Identification of Sn-V related acceptor levels in irradiated tin-doped n-type silicon
Simoen, Eddy; Claeys, Cor; Neimash, V. B.; Kraitchinskii, A.; Kras'ko, M.; Puzenko, O.; Blondeel, A.; Clauws, P.; Pattyn, Hugo; Koops, G.E.J.; Pattyn, H. (2000) -
Influence of germanium content on the degradation of strained Si1-xGex epitaxial diodes by electron irradiation
Ohyama, Hidenori; Vanhellemont, Jan; Sunaga, H.; Poortmans, Jef; Caymax, Matty; Clauws, P. (1994) -
Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Stesmans, Andre; Clauws, P. (1996) -
Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments
Vanhellemont, Jan; Kissinger, G.; Clauws, P.; Kaniava, Arvydas; Libezny, Milan; Gaubas, Eugenijus; Simoen, Eddy; Richter, H.; Claeys, Cor (1996) -
Investigation of hydrogenated CVD diamond films by photo-thermal ionization spectroscopy
Hikkavy, A.; Clauws, P.; Deferme, W.; Bogdan, G.; Nesladek, Milos; Haenen, Ken (2005) -
Investigations by capacitance methods of n-Si irradiated by electrons at 450°C
Neimash, V.B.; Kras'Ko, M.M.; Kraitchinski, A.M.; Kolosyuk, A.G.; Voytovych, V.V.; Simoen, Eddy; Rafi, J.M.; Claeys, Cor; Versluys, J.; Clauws, P. (2004) -
Irradiation Induced Lattice Defects in Si1-xGex Devices and Their Effect on Device Performance
Ohyama, Hidenori; Vanhellemont, Jan; Takami, Y.; Hayama, Kiyoteru; Sunaga, H.; Poortmans, Jef; Caymax, Matty; Clauws, P. (1994) -
Irradiation induced lattice defects in Si1-xGex devices and their effect on device performance
Ohyama, Hidenori; Vanhellemont, Jan; Takami, Y.; Hayama, Kiyoteru; Sunaga, H.; Poortmans, Jef; Caymax, Matty; Clauws, P. (1995) -
Lifetime and leakage current considerations in metal-doped germanium
Simoen, Eddy; Claeys, Cor; Sioncke, Sonja; Van Steenbergen, Jan; Meuris, Marc; Forment, S.; Vanhellemont, Jan; Clauws, P.; Theuwis, A. (2007)