Browsing by author "Clauws, P."
Now showing items 41-60 of 70
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Low Temperature Anneal of Electron Irradiation Induced Defects in p-Type Silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Clauws, P. (1994) -
Low temperature anneal of electron irradiation induced defects in p-type silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Clauws, P. (1998) -
Low temperature anneal of the divacancy in p-type silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Stesmans, Andre; Clauws, P. (1995) -
Low Temperature Anneal of the Divacancy in p-Type Silicon
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Clauws, P. (1994) -
Low-temperature anneal of the divacancy in p-type silicon: a transformation from V2 to VxOy complexes
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Clauws, P. (1995) -
Metal in-diffusion during Fe and Co-germanidation of germanium
Simoen, Eddy; Opsomer, Karl; Claeys, Cor; Maex, Karen; Detavernier, C.; Van Meirhaeghe, R.L.; Clauws, P. (2008) -
Monitoring of neutron transmutation doped silicon recombination properties by microwave absorption transient techniques
Gaubas, Eugenijus; Vanhellemont, Jan; Simoen, Eddy; Claeys, Cor; Clauws, P.; Kraner, H. W.; Vilkelis, G. (1996) -
On the behaviour of the divacancy in silicon during anneals between 150 and 350 C
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Maes, Herman; Van Bavel, Mieke; Langouche, G.; Stesmans, Andre; Clauws, P. (1995) -
On the degradation of 1-MeV electron irradiated Si1-xGex diodes
Ohyama, H.; Vanhellemont, Jan; Sunaga, H.; Poortmans, Jef; Caymax, Matty; Clauws, P. (1994) -
On the degradation of 1-MeV electron irradiated Si1-xGex diodes
Ohyama, Hidenori; Vanhellemont, Jan; Sunaga, H.; Poortmans, Jef; Caymax, Matty; Clauws, P. (1994) -
On the electrical activity of oxygen-related extended defects in silicon
Vanhellemont, Jan; Simoen, Eddy; Bosman, Gijs; Claeys, Cor; Kaniava, Arvydas; Gaubas, Eugenijus; Blondeel, A.; Clauws, P. (1994) -
On the impact of low fluence irradiation with MeV particles on silicon diode characteristics and related material properties
Vanhellemont, Jan; Simoen, Eddy; Claeys, Cor; Kaniava, Arvydas; Gaubas, Eugenijus; Bosman, Gijs; Johlander, B.; Adams, L.; Clauws, P. (1994) -
On the impact of metal impurities on the carrier lifetime in n-type germanium
Gaubas, E.; Vanhellemont, J.; Simoen, Eddy; Theuwis, A.; Clauws, P. (2007) -
On the recombination activity of oxygen precipitation related lattice defects in silicon
Vanhellemont, Jan; Kaniava, Arvydas; Libezny, Milan; Simoen, Eddy; Kissinger, G.; Gaubas, E.; Claeys, C.; Clauws, P. (1995) -
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon
Simoen, Eddy; Loo, Roger; Claeys, Cor; De Gryse, O.; Clauws, P.; Van Landuyt, J.; Lebedev, O. (2002) -
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques
De Gryse, O.; Clauws, P.; Van Landuyt, J.; Lebedev, O.; Claeys, Cor; Simoen, Eddy; Vanhellemont, Jan (2002) -
P-N junction diode fabricated based on donor formation in plasma hydrogenated P-type czochralski silicon
Huang, Y.L.; Job, R.; Simoen, Eddy; Claeys, Cor; Ma, Y.; Dungen, W.; Fahrner, W.R.; Versluijs, Janko; Clauws, P. (2005) -
Photoluminescence and deep-level transient spectroscopy study of tin related radiation defects in silicon
Simoen, Eddy; Claeys, Cor; Privitera, Vittorio; Coffa, S.; Nylandsted Larsen, A.; Clauws, P. (2001) -
Point-defect generation in Ni-, Pd-, and Pt-germanide Schottky barriers on n-type germanium
Simoen, Eddy; Opsomer, Karl; Claeys, Cor; Maex, Karen; Detavernier, C.; Van Meirhaeghe, R.L.; Clauws, P. (2007) -
PTIS investigation of hydrogenated CVD diamond films
Hikkavyy, A.; Clauws, P.; Deferme, W.; Bogadan, G.; Haenen, Ken; Nesladek, Milos (2005)