Browsing by author "You, Shuzhen"
Now showing items 21-40 of 81
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Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates
You, Shuzhen; Posthuma, Niels; Ronchi, Nicolo; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Liang, Hu; Zhao, Ming; Decoutere, Stefaan (2018) -
Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
Marcon, Denis; Van Hove, Marleen; De Jaeger, Brice; Posthuma, Niels; Wellekens, Dirk; You, Shuzhen; Kang, Xuanwu; Wu, Tian-Li; Willems, Maarten; Stoffels, Steve; Decoutere, Stefaan (2015) -
DLTS Study of Electrically Active Defects in semi-vertical GaN-on-Si FETs
Drobnŭ, Jakub; Marek, Juraj; Koza, A.; Vadovski, J.; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Electrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices
Marek, Juraj; Mikoláek, Miroslav; Drobnŭ, Jakub; Kozarik, Jozef; Chvála, Ale; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Fahle, Dirk; Zhao, Ming; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan; Hahn, Herwig; Heuken, Michael (2019) -
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
Stoffels, Steve; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Zhao, Ming; Borga, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan (2018) -
Exploration of gate trench module for vertical GaN devices
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Neviani, Andrea; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2020) -
Feasibility study for half-terahertz SiGe:C HBTs
You, Shuzhen (2012-07) -
Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors
Wu, Tian-Li; Marcon, Denis; You, Shuzhen; Posthuma, Niels; Bakeroot, Benoit; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2015) -
GaN Device architectures enabled by next generation substrates
Stoffels, Steve; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Van Hove, Marleen; Decoutere, Stefaan (2018) -
GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect
You, Shuzhen; Li, Xiangdong; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan (2021) -
GaN-on-SOI: Monolithically integrated all GaN ICs for power conversion
Li, Xiangdong; Amirifar, Nooshin; Geens, Karen; Zhao, Ming; Guo, Weiming; Liang, Hu; You, Shuzhen; Posthuma, Niels; De Jaeger, Brice; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Cosnier, Thibault; Langer, Robert; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Liang, Hu; Zhao, Ming; Decoutere, Stefaan (2018) -
Gate module study for performance improvement in vertical GaN device
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2021) -
Gate stability of enhancement mode GaN power devices
Wu, Tian-Li; Marcon, Denis; De Jaeger, Brice; Posthuma, Niels; Bakeroot, Benoit; You, Shuzhen; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2016) -
Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration
Sibaja-Hernandez, Arturo; You, Shuzhen; Van Huylenbroeck, Stefaan; Venegas, Rafael; De Meyer, Kristin; Decoutere, Stefaan (2011) -
Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination
Hu, Jie; Stoffels, Steve; Lenci, Silvia; Ronchi, Nicolo; De Jaeger, Brice; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan (2016) -
Impact of isolation scheme on thermal resistance and collecotr-substrate capacitance of SiGe HBTs
You, Shuzhen; Decoutere, Stefaan; Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; De Meyer, Kristin (2011) -
Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance
Posthuma, Niels; You, Shuzhen; Liang, Hu; Ronchi, Nicolo; Kang, Xuanwu; Wellekens, Dirk; Saripalli, Yoga; Decoutere, Stefaan (2016) -
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
Favero, D.; De Santi, C.; Mukherjee, K.; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022)