Browsing by author "Posthuma, Niels"
Now showing items 41-60 of 145
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Development of solar cells on RST-ribbons
Robbelein, Jo; Van Kerschaver, Emmanuel; Belouet, Christian; Jolivet, Emily; Focsa, Alexandru; Slaoui, Abdelillah; Posthuma, Niels; Chan, B.T.; Monville, M.; Bigot, C.; Poortmans, Jef (2009) -
Development of stand-alone germanium solar cells for application in space using spin-on diffusants
Posthuma, Niels; Flamand, Giovanni; Poortmans, Jef (2003) -
Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates
You, Shuzhen; Posthuma, Niels; Ronchi, Nicolo; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Liang, Hu; Zhao, Ming; Decoutere, Stefaan (2018) -
Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
Marcon, Denis; Van Hove, Marleen; De Jaeger, Brice; Posthuma, Niels; Wellekens, Dirk; You, Shuzhen; Kang, Xuanwu; Wu, Tian-Li; Willems, Maarten; Stoffels, Steve; Decoutere, Stefaan (2015) -
Dispersion free high voltage III-N buffer development on 200 mm silicon for power electronics
Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Novak, Tomas; Van Hove, Marleen; Stoffels, Steve; De Jaeger, Brice; Posthuma, Niels; Marcon, Denis; Decoutere, Stefaan; Langer, Robert (2015) -
Dual junction germanium bottom cells for application in mechanically stacked solar cells
Posthuma, Niels; Flamand, Giovanni; Poortmans, Jef (2005) -
Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation
Chvála, Ale; Marek, Juraj; Príbytnŭ, Patrik; atka, Alexander; Donoval, Daniel; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan (2017-09) -
Emitter formation and contact realization by diffusion for germanium photovoltaic devices
Posthuma, Niels; van der Heide, Johan; Flamand, Giovanni; Poortmans, Jef (2007-05) -
Enhancement-mode p-GaN-HEMT Epitaxy Technology on 200 mm Si Substrates
Liang, Hu; Posthuma, Niels; Stoffels, Steve; Zhao, Ming; Decoutere, Stefaan (2019) -
Epitaxial boron-doped emitter by CVD for rear junction n-type solar cells
Gong, Chun; Van Nieuwenhuysen, Kris; Posthuma, Niels; Van Kerschaver, Emmanuel; Poortmans, Jef (2009) -
Etch development for E-mode GaN power HEMT fabrication
Mannaert, Geert; Posthuma, Niels; De Jaeger, Brice; Van Hove, Marleen; Xu, Kaidong; Decoutere, Stefaan; Paraschiv, Vasile (2014) -
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
Stoffels, Steve; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Zhao, Ming; Borga, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan (2018) -
Evidence of time-dependent vertical breakdown in GaN-on-Si HEMTs
Borga, Matteo; Meneghini, Matteo; Rossetto, Isabella; Stoffels, Steve; Posthuma, Niels; Van Hove, Marleen; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration
Stoffels, Steve; Bakeroot, Benoit; Wu, Tian-Li; Marcon, Denis; Posthuma, Niels; Decoutere, Stefaan; Tallarico, A.N.; Fiegna, C. (2017) -
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
Rossetto, Isabella; Meneghini, Matteo; Canato, E.; Barbato, M.; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Tallarico, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors
Wu, Tian-Li; Marcon, Denis; You, Shuzhen; Posthuma, Niels; Bakeroot, Benoit; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Front side metallization of silicon solar cells by Copper-platingaP
Hernandez, Jose Luis; Aleman, Monica; Allebe, Christophe; Bearda, Twan; John, Joachim; Kuzma Filipek, Izabela; Philipsen, Harold; Posthuma, Niels; Prajapati, Victor; Rodet, Simon; Poortmans, Jef (2010-04) -
GaN Device architectures enabled by next generation substrates
Stoffels, Steve; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Van Hove, Marleen; Decoutere, Stefaan (2018) -
GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect
You, Shuzhen; Li, Xiangdong; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan (2021) -
GaN-on-SOI: Monolithically integrated all GaN ICs for power conversion
Li, Xiangdong; Amirifar, Nooshin; Geens, Karen; Zhao, Ming; Guo, Weiming; Liang, Hu; You, Shuzhen; Posthuma, Niels; De Jaeger, Brice; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Cosnier, Thibault; Langer, Robert; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2019)