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The impact of plasma-induced surface damage on photoelectrochemical properties of GaN pillars fabricated by dry etching
Publication:
The impact of plasma-induced surface damage on photoelectrochemical properties of GaN pillars fabricated by dry etching
Date
2014
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Tseng, Peter
;
van Dorp, Dennis
;
Lieten, Ruben
;
Vereecken, Philippe
;
Langer, Robert
;
Borghs, Gustaaf
Journal
Journal of Physical Chemistry C
Abstract
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1862
since deposited on 2021-10-22
433
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Acq. date: 2025-10-24
Citations
Metrics
Views
1862
since deposited on 2021-10-22
433
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations