The impact of plasma-induced surface damage on photoelectrochemical properties of GaN pillars fabricated by dry etching

dc.contributor.author	Tseng, Peter
dc.contributor.author	van Dorp, Dennis
dc.contributor.author	Lieten, Ruben
dc.contributor.author	Vereecken, Philippe
dc.contributor.author	Langer, Robert
dc.contributor.author	Borghs, Gustaaf
dc.contributor.imecauthor	van Dorp, Dennis
dc.contributor.imecauthor	Lieten, Ruben
dc.contributor.imecauthor	Vereecken, Philippe
dc.contributor.imecauthor	Langer, Robert
dc.contributor.imecauthor	Borghs, Gustaaf
dc.contributor.orcidimec	van Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimec	Vereecken, Philippe::0000-0003-4115-0075
dc.contributor.orcidimec	Langer, Robert::0000-0002-1132-3468
dc.date.accessioned	2021-10-22T06:42:51Z
dc.date.available	2021-10-22T06:42:51Z
dc.date.issued	2014
dc.identifier.issn	1932-7447
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/24633
dc.identifier.url	http://pubs.acs.org/doi/abs/10.1021/jp503119n
dc.source.beginpage	11261
dc.source.endpage	11266
dc.source.journal	Journal of Physical Chemistry C
dc.source.volume	118
dc.title	The impact of plasma-induced surface damage on photoelectrochemical properties of GaN pillars fabricated by dry etching
dc.type	Journal article
dspace.entity.type	Publication
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