Publication:

Properties of HfTaxOy high-k layers deposited by ALCVD

Date

2005
Proceedings Paper
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dc.contributor.authorZhao, Chao
dc.contributor.authorRittersma, Z.M.
dc.contributor.authorvan Berkum, J.G.M.
dc.contributor.authorSnijders, J.H.M.
dc.contributor.authorHendriks, A.
dc.contributor.authorBreimer, P.
dc.contributor.authorGraat, P.
dc.contributor.authorMaes, Jan
dc.contributor.authorWitters, H.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorTois, E.
dc.contributor.authorTuominen, N.
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T07:29:08Z
dc.date.available2021-10-16T07:29:08Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11608
dc.source.beginpage133
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment
dc.source.conferencedate15/05/2005
dc.source.conferencelocationQuebec Canada
dc.source.endpage140
dc.title

Properties of HfTaxOy high-k layers deposited by ALCVD

dc.typeProceedings paper
dspace.entity.typePublication
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