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In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)
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1825 since deposited on 2021-10-17
Acq. date: 2025-12-16
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Views
1825 since deposited on 2021-10-17
Acq. date: 2025-12-16
Citations