Publication:

In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)

Date

2008
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorGermain, Marianne
dc.contributor.authorCheng, Kai
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDegroote, Stefan
dc.contributor.authorDas, Jo
dc.contributor.authorLorenz, Anne
dc.contributor.authorMarcon, Denis
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLeys, Maarten
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-17T07:13:31Z
dc.date.available2021-10-17T07:13:31Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13759
dc.source.beginpage2010
dc.source.endpage2012
dc.source.issue6
dc.source.journalPhysica Status Solidi C
dc.source.volume5
dc.title

In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
16424.pdf
Size:
1.46 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles