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DC, LF dispersion and RF characterisation of short-time stressed InP based LM-HEMTs

Date

1996
Journal article
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dc.contributor.authorSchreurs, Dominique
dc.contributor.authorSpiers, Ariane
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorvan der Zanden, Koen
dc.contributor.authorBaeyens, Yves
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorVan Rossum, Marc
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorNauwelaers, Bart
dc.date.accessioned2021-09-29T15:23:13Z
dc.date.available2021-09-29T15:23:13Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1466
dc.source.beginpage1911
dc.source.endpage1914
dc.source.journalMicroelectronics and Reliability
dc.source.volume36
dc.title

DC, LF dispersion and RF characterisation of short-time stressed InP based LM-HEMTs

dc.typeJournal article
dspace.entity.typePublication
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