Stress in Silicon-Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors

Eneman, Geert; Veloso, Anabela; Favia, Paola; Hikavyy, Andriy; Porret, Clément; Arimura, Hiroaki; De Keersgieter, An; Pourtois, Geoffrey; Loo, Roger; Spessot, Alessio; Matagne, Philippe; Ryckaert, Julien; Horiguchi, Naoto

doi:10.1109/ted.2021.3076754

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Stress in Silicon-Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors

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2021

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https://doi.org/10.1109/ted.2021.3076754

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IEEE TRANSACTIONS ON ELECTRON DEVICES

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Acq. date: 2026-08-23

Stress in Silicon-Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors

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