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On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs Metal-Oxide-Semiconductor devices studied by Capacitance-Voltage hysteresis
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1844 since deposited on 2021-10-24
Acq. date: 2026-01-10
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1844 since deposited on 2021-10-24
Acq. date: 2026-01-10
Citations