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On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs Metal-Oxide-Semiconductor devices studied by Capacitance-Voltage hysteresis

Date

2017
Journal article
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dc.contributor.authorVais, Abhitosh
dc.contributor.authorFranco, Jacopo
dc.contributor.authorLin, Dennis
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorSioncke, Sonja
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T15:25:13Z
dc.date.available2021-10-24T15:25:13Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29615
dc.identifier.urlhttp://aip.scitation.org/doi/full/10.1063/1.4980170
dc.source.beginpage144504
dc.source.issue14
dc.source.journalJournal of Applied Physics
dc.source.volume121
dc.title

On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs Metal-Oxide-Semiconductor devices studied by Capacitance-Voltage hysteresis

dc.typeJournal article
dspace.entity.typePublication
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