Multi-gate devices for the 32nm technology node and beyond: challenges for selective epitaxial growth

dc.contributor.author	Collaert, Nadine
dc.contributor.author	Rooyackers, Rita
dc.contributor.author	Hikavyy, Andriy
dc.contributor.author	Dixit, Abhisek
dc.contributor.author	Leys, Frederik
dc.contributor.author	Verheyen, Peter
dc.contributor.author	Loo, Roger
dc.contributor.author	Jurczak, Gosia
dc.contributor.author	Biesemans, Serge
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.imecauthor	Hikavyy, Andriy
dc.contributor.imecauthor	Verheyen, Peter
dc.contributor.imecauthor	Loo, Roger
dc.contributor.imecauthor	Jurczak, Gosia
dc.contributor.imecauthor	Biesemans, Serge
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimec	Hikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimec	Loo, Roger::0000-0003-3513-6058
dc.date.accessioned	2021-10-17T06:35:42Z
dc.date.available	2021-10-17T06:35:42Z
dc.date.issued	2008
dc.identifier.issn	0040-6090
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/13546
dc.source.beginpage	101
dc.source.endpage	104
dc.source.issue	1
dc.source.journal	Thin Solid Films
dc.source.volume	517
dc.title	Multi-gate devices for the 32nm technology node and beyond: challenges for selective epitaxial growth
dc.type	Journal article
dspace.entity.type	Publication
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