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Pre-Epi Clean of SiGe 20%: GeH4 and HCl vs H2-based in-situ cleaning

Date

2018-05
Meeting abstract
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dc.contributor.authorWostyn, Kurt
dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorGencarelli, Federica
dc.contributor.authorMasaoku, Toru
dc.contributor.authorIino, Hideaki
dc.contributor.authorYoshida, Yukifumi
dc.contributor.authorKomori, Kana
dc.contributor.authorDouhard, Bastien
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorHolsteyns, Frank
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-26T09:34:31Z
dc.date.available2021-10-26T09:34:31Z
dc.date.issued2018-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32280
dc.source.beginpage193
dc.source.conference9th International SiGe Technology and Device Meeting / 11th International Conference on Silicon Epitaxy and Heterostructures
dc.source.conferencedate27/05/2018
dc.source.conferencelocationPotsdam Germany
dc.source.endpage194
dc.title

Pre-Epi Clean of SiGe 20%: GeH4 and HCl vs H2-based in-situ cleaning

dc.typeMeeting abstract
dspace.entity.typePublication
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