Publication:

Observation and characterization of defects in HfO2 high-k gate dielectric layers

Date

2005
Journal article
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dc.contributor.authorKaushik, Vidya
dc.contributor.authorClaes, Martine
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorRichard, Olivier
dc.contributor.authorRohr, Erika
dc.contributor.authorWitters, Thomas
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T02:28:34Z
dc.date.available2021-10-16T02:28:34Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10683
dc.source.beginpage798
dc.source.endpage801
dc.source.issue5_6
dc.source.journalMicroelectronics Reliability
dc.source.volume45
dc.title

Observation and characterization of defects in HfO2 high-k gate dielectric layers

dc.typeJournal article
dspace.entity.typePublication
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