Publication:

Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques

Date

2023
Journal article
https://doi.org/10.1016/j.sse.2023.108722
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-1484-4007
cris.virtual.orcid0000-0002-7382-8605
cris.virtualsource.department812f2909-a81b-4593-9b32-75331cffa35c
cris.virtualsource.department54f24b6a-b745-4c59-a5bc-058756e94864
cris.virtualsource.orcid812f2909-a81b-4593-9b32-75331cffa35c
cris.virtualsource.orcid54f24b6a-b745-4c59-a5bc-058756e94864
dc.contributor.authorAsanovski, Ruben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorPalestri, Pierpaolo
dc.contributor.authorKaczer, Ben
dc.contributor.authorSelmi, Luca
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2024-03-19T08:59:35Z
dc.date.available2023-10-05T17:19:25Z
dc.date.available2024-03-19T08:59:35Z
dc.date.embargo2023-08-02
dc.date.issued2023
dc.identifier.doi10.1016/j.sse.2023.108722
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42651
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpageArt. 108722
dc.source.endpageN/A
dc.source.issueSeptember
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages5
dc.source.volume207
dc.subject.keywordsRANDOM TELEGRAPH NOISE
dc.subject.keywordsFLICKER NOISE
dc.subject.keywordsGATE
dc.title

Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques

dc.typeJournal article
dspace.entity.typePublication
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