Publication:

Progress towards an electrically active, ultra-shallow junction depth reference for carrier illumination, SRP and SIMS

Date

 
dc.contributor.authorBorden, P.
dc.contributor.authorBechtler, L.
dc.contributor.authorKlemme, B.
dc.contributor.authorNijmeijer, R.
dc.contributor.authorJudge, E.
dc.contributor.authorDiebold, A.
dc.contributor.authorBennett, J.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClarysse, Trudo
dc.contributor.authorCaymax, Matty
dc.contributor.authorPeytier, Ivan
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.date.accessioned2021-10-14T16:38:20Z
dc.date.available2021-10-14T16:38:20Z
dc.date.embargo9999-12-31
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5083
dc.source.beginpage161
dc.source.conference6th Int. Workshop on Fabrication, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - USJ
dc.source.conferencedate22/04/2001
dc.source.conferencelocationNapa, CA USA
dc.source.endpage167
dc.title

Progress towards an electrically active, ultra-shallow junction depth reference for carrier illumination, SRP and SIMS

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
5073.pdf
Size:
312.22 KB
Format:
Adobe Portable Document Format
Publication available in collections: