Publication:

Reliability of p-GaN Gate HEMTs in Reverse Conduction

Date

2021

Journal article

https://doi.org/10.1109/TED.2020.3042134

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Author(s)

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Bakeroot, Benoit

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Amirifar, Nooshin

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Jacobs, Kristof J.P.

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Groeseneken, Guido

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Decoutere, Stefaan

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

Metrics

1892 since deposited on 2022-02-22

Acq. date: 2025-12-15