Publication:
Reliability of p-GaN Gate HEMTs in Reverse Conduction
| dc.contributor.author | Cingu, Deepthi | |
| dc.contributor.author | Li, Xiangdong | |
| dc.contributor.author | Bakeroot, Benoit | |
| dc.contributor.author | Amirifar, Nooshin | |
| dc.contributor.author | Geens, Karen | |
| dc.contributor.author | Jacobs, Kristof J.P. | |
| dc.contributor.author | Zhao, Ming | |
| dc.contributor.author | You, Shuzhen | |
| dc.contributor.author | Groeseneken, Guido | |
| dc.contributor.author | Decoutere, Stefaan | |
| dc.contributor.imecauthor | Cingu, Deepthi | |
| dc.contributor.imecauthor | Li, Xiangdong | |
| dc.contributor.imecauthor | Bakeroot, Benoit | |
| dc.contributor.imecauthor | Amirifar, Nooshin | |
| dc.contributor.imecauthor | Geens, Karen | |
| dc.contributor.imecauthor | Jacobs, Kristof J. P. | |
| dc.contributor.imecauthor | Zhao, Ming | |
| dc.contributor.imecauthor | You, Shuzhen | |
| dc.contributor.imecauthor | Groeseneken, Guido | |
| dc.contributor.imecauthor | Decoutere, Stefaan | |
| dc.contributor.imecauthor | Jacobs, Kristof J.P. | |
| dc.contributor.orcidimec | Cingu, Deepthi::0000-0002-3042-7289 | |
| dc.contributor.orcidimec | Li, Xiangdong::0000-0002-6694-0914 | |
| dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
| dc.contributor.orcidimec | Geens, Karen::0000-0003-1815-3972 | |
| dc.contributor.orcidimec | Jacobs, Kristof J. P.::0000-0002-1081-3633 | |
| dc.contributor.orcidimec | Groeseneken, Guido::0000-0003-3763-2098 | |
| dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
| dc.contributor.orcidimec | Zhao, Ming::0000-0002-0856-851X | |
| dc.contributor.orcidimec | Jacobs, Kristof J.P.::0000-0002-1081-3633 | |
| dc.date.accessioned | 2022-02-22T10:46:49Z | |
| dc.date.available | 2022-02-22T10:46:49Z | |
| dc.date.issued | 2021 | |
| dc.identifier.doi | 10.1109/TED.2020.3042134 | |
| dc.identifier.issn | 0018-9383 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/38988 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 645 | |
| dc.source.endpage | 652 | |
| dc.source.issue | 2 | |
| dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
| dc.source.numberofpages | 8 | |
| dc.source.volume | 68 | |
| dc.subject.keywords | DYNAMIC R-ON | |
| dc.subject.keywords | V-TH | |
| dc.subject.keywords | SUPPRESSION | |
| dc.title | Reliability of p-GaN Gate HEMTs in Reverse Conduction | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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