Publication:

A statistical approach to microdose induced degradation in FinFET devices

Date

2009
Journal article
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dc.contributor.authorGriffoni, Alessio
dc.contributor.authorGerardin, S.
dc.contributor.authorRoussel, Philippe
dc.contributor.authorDegraeve, Robin
dc.contributor.authorMeneghesso, G.
dc.contributor.authorPaccagnella, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-17T22:33:35Z
dc.date.available2021-10-17T22:33:35Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15396
dc.source.beginpage3285
dc.source.endpage3292
dc.source.issue6_1
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.volume56
dc.title

A statistical approach to microdose induced degradation in FinFET devices

dc.typeJournal article
dspace.entity.typePublication
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