Publication:

Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility

Date

2024
Journal article
https://doi.org/10.1021/acsami.4c08988
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dc.contributor.authorKwon, DaeSeon
dc.contributor.authorBizindavyi, Jasper
dc.contributor.authorDe, Gourab
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorDelabie, Annelies
dc.contributor.authorNyns, Laura
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.imecauthorBizindavyi, Jasper
dc.contributor.imecauthorDe, Gourab
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorKwon, DaeSeon
dc.contributor.orcidimecBizindavyi, Jasper::0000-0002-2213-9017
dc.contributor.orcidimecDe, Gourab::0009-0009-3457-3353
dc.contributor.orcidimecBelmonte, Attilio::0000-0002-3947-1948
dc.contributor.orcidimecDelabie, Annelies::0000-0001-9739-7419
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecPopovici, Mihaela Ioana::0000-0002-9838-1088
dc.contributor.orcidimecKwon, DaeSeon::0000-0002-0025-9042
dc.date.accessioned2024-09-25T10:21:44Z
dc.date.available2024-08-07T19:37:40Z
dc.date.available2024-09-25T10:21:44Z
dc.date.issued2024
dc.description.wosFundingTextThis work was performed under imec's Industrial Affiliation Program on Ferroelectrics. The authors acknowledge Martin Rosenthal for helping with the GIWAXS analysis in ESRF Grenoble (Experiment number: A26-2-968 in 2023), Thierry Conard for helping with the XPS analysis, and Olivier Richard and Paola Favia for helping with the TEM analysis.
dc.identifier.doi10.1021/acsami.4c08988
dc.identifier.issn1944-8244
dc.identifier.pmidMEDLINE:39056583
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44279
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage41704
dc.source.endpage41715
dc.source.issue31
dc.source.journalACS APPLIED MATERIALS & INTERFACES
dc.source.numberofpages12
dc.source.volume16
dc.subject.keywordsHFXZR1-XO2 THIN-FILMS
dc.subject.keywordsPHASE
dc.subject.keywordsHF0.5ZR0.5O2
dc.subject.keywordsCHEMISTRY
dc.subject.keywordsHFO2
dc.title

Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility

dc.typeJournal article
dspace.entity.typePublication
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