Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Articles
Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments
Publication:
Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments
Copy permalink
Date
2014
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Jiang, Sijia
;
Merckling, Clement
;
Guo, Weiming
;
Waldron, Niamh
;
Caymax, Matty
;
Vandervorst, Wilfried
;
Seefeldt, Marc
;
Heyns, Marc
Journal
Journal of Crystal Growth
Abstract
Description
Metrics
Views
1931
since deposited on 2021-10-22
Acq. date: 2025-12-10
Citations
Metrics
Views
1931
since deposited on 2021-10-22
Acq. date: 2025-12-10
Citations