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Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments
Publication:
Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments
Date
2014
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Jiang, Sijia
;
Merckling, Clement
;
Guo, Weiming
;
Waldron, Niamh
;
Caymax, Matty
;
Vandervorst, Wilfried
;
Seefeldt, Marc
;
Heyns, Marc
Journal
Journal of Crystal Growth
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1929
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations
Metrics
Views
1929
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations