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Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments

Date

2014
Journal article
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dc.contributor.authorJiang, Sijia
dc.contributor.authorMerckling, Clement
dc.contributor.authorGuo, Weiming
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorSeefeldt, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.accessioned2021-10-22T02:21:07Z
dc.date.available2021-10-22T02:21:07Z
dc.date.issued2014
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24009
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0022024814000153
dc.source.beginpage59
dc.source.endpage63
dc.source.journalJournal of Crystal Growth
dc.source.volume391
dc.title

Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments

dc.typeJournal article
dspace.entity.typePublication
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