Publication:

Low frequency noise performance of gate-first and replacement metal gate CMOS technologies

Date

2013
Proceedings Paper
Simple item page Full metadata Statistics
 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0001-5490-0416
cris.virtual.orcid0000-0002-5218-4046
cris.virtualsource.department9f04b13f-f81c-4d48-a5bd-0b2cb5210392
cris.virtualsource.department715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.orcid9f04b13f-f81c-4d48-a5bd-0b2cb5210392
cris.virtualsource.orcid715a9ada-0798-46d2-a8ca-4775db9a8e46
dc.contributor.authorClaeys, Cor
dc.contributor.authorLee, Jae Woo
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorParaschiv, Vasile
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-21T07:00:11Z
dc.date.available2021-10-21T07:00:11Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22155
dc.source.beginpage1
dc.source.conferenceIEEE International Conference on Electron Devices and Solid-State Circuits - EDSSC
dc.source.conferencedate3/06/2013
dc.source.conferencelocationHong Kong Hong Kong
dc.source.endpage2
dc.title

Low frequency noise performance of gate-first and replacement metal gate CMOS technologies

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
26932.pdf
Size:
471.25 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions