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Vapor phase deposited total X-ray fluorescence as a means to study copper drift diffusion in low-k dielectrics

Date

2001
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dc.contributor.authorLanckmans, Filip
dc.contributor.authorArnauts, Sophia
dc.contributor.authorMaex, Karen
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorMaex, Karen
dc.date.accessioned2021-10-14T17:13:00Z
dc.date.available2021-10-14T17:13:00Z
dc.date.embargo9999-12-31
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5426
dc.source.conferenceMRS Spring Meeting. Symposium L: Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics; April
dc.source.conferencelocation
dc.title

Vapor phase deposited total X-ray fluorescence as a means to study copper drift diffusion in low-k dielectrics

dc.typeOral presentation
dspace.entity.typePublication
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