Publication:
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures
| dc.contributor.author | Loo, Roger | |
| dc.contributor.author | Arimura, Hiroaki | |
| dc.contributor.author | Cott, Daire | |
| dc.contributor.author | Witters, Liesbeth | |
| dc.contributor.author | Pourtois, Geoffrey | |
| dc.contributor.author | Schulze, Andreas | |
| dc.contributor.author | Douhard, Bastien | |
| dc.contributor.author | Vanherle, Wendy | |
| dc.contributor.author | Eneman, Geert | |
| dc.contributor.author | Richard, Olivier | |
| dc.contributor.author | Favia, Paola | |
| dc.contributor.author | Mitard, Jerome | |
| dc.contributor.author | Mocuta, Dan | |
| dc.contributor.author | Langer, Robert | |
| dc.contributor.author | Collaert, Nadine | |
| dc.contributor.imecauthor | Loo, Roger | |
| dc.contributor.imecauthor | Arimura, Hiroaki | |
| dc.contributor.imecauthor | Cott, Daire | |
| dc.contributor.imecauthor | Witters, Liesbeth | |
| dc.contributor.imecauthor | Pourtois, Geoffrey | |
| dc.contributor.imecauthor | Douhard, Bastien | |
| dc.contributor.imecauthor | Vanherle, Wendy | |
| dc.contributor.imecauthor | Eneman, Geert | |
| dc.contributor.imecauthor | Richard, Olivier | |
| dc.contributor.imecauthor | Favia, Paola | |
| dc.contributor.imecauthor | Mitard, Jerome | |
| dc.contributor.imecauthor | Langer, Robert | |
| dc.contributor.imecauthor | Collaert, Nadine | |
| dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
| dc.contributor.orcidimec | Pourtois, Geoffrey::0000-0003-2597-8534 | |
| dc.contributor.orcidimec | Eneman, Geert::0000-0002-5849-3384 | |
| dc.contributor.orcidimec | Richard, Olivier::0000-0002-3994-8021 | |
| dc.contributor.orcidimec | Favia, Paola::0000-0002-1019-3497 | |
| dc.contributor.orcidimec | Mitard, Jerome::0000-0002-7422-079X | |
| dc.contributor.orcidimec | Langer, Robert::0000-0002-1132-3468 | |
| dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
| dc.date.accessioned | 2021-10-25T22:27:03Z | |
| dc.date.available | 2021-10-25T22:27:03Z | |
| dc.date.issued | 2018-02 | |
| dc.identifier.doi | 10.1149/2.0191802jss | |
| dc.identifier.issn | 2162-8769 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/31228 | |
| dc.identifier.url | http://jss.ecsdl.org/cgi/content/abstract/7/2/P66. | |
| dc.source.beginpage | P66 | |
| dc.source.endpage | P72 | |
| dc.source.issue | 2 | |
| dc.source.journal | ECS Journal of Solid State Science and Technology | |
| dc.source.volume | 7 | |
| dc.title | Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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