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RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx-based RRAM

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dc.contributor.authorRaghavan, Naga
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorWouters, Dirk
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-21T11:13:57Z
dc.date.available2021-10-21T11:13:57Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22973
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6576642&queryText%3DRTN+insight+to+filamentary+instability+and+di
dc.source.beginpageT164
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate11/06/2013
dc.source.conferencelocationKyoto Japan
dc.source.endpageT165
dc.title

RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx-based RRAM

dc.typeProceedings paper
dspace.entity.typePublication
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