Publication:

Negative Bias Temperature Instability (NBTI) in p-FinFETs with 45-degree substrate rotation

Date

2013
Journal article
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dc.contributor.authorCho, Moon Ju
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorKrom, Raymond
dc.contributor.authorHiguchi, Yuichi
dc.contributor.authorKaczer, Ben
dc.contributor.authorChiarella, Thomas
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-21T06:58:42Z
dc.date.available2021-10-21T06:58:42Z
dc.date.issued2013
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22146
dc.source.beginpage1211
dc.source.endpage1213
dc.source.issue10
dc.source.journalIEEE Electron Device Letters
dc.source.volume34
dc.title

Negative Bias Temperature Instability (NBTI) in p-FinFETs with 45-degree substrate rotation

dc.typeJournal article
dspace.entity.typePublication
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