Publication:

Parasitic side channel formation due to ion implantation isolation of GaN HEMT

Date

2022-12-21
Journal article
https://doi.org/10.1557/s43580-022-00453-6
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Accepted version 1.06 MB
Published version 2.33 MB

Author(s)

Yu, Hao  
;
Peralagu, Uthayasankaran  
;
Alian, Alireza
;
Zhao, Ming  
;
Parvais, Bertrand  
;
Collaert, Nadine  

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MRS ADVANCES

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1227 since deposited on 2023-01-14
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217 since deposited on 2023-01-14
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1227 since deposited on 2023-01-14
Acq. date: 2025-10-26

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