Publication:

Parasitic side channel formation due to ion implantation isolation of GaN HEMT

Date

2022-12-21
Journal article
https://doi.org/10.1557/s43580-022-00453-6
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dc.contributor.authorYu, Hao
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorAlian, Alireza
dc.contributor.authorZhao, Ming
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorAlian, Alireza
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2023-05-16T11:56:28Z
dc.date.available2023-01-14T03:13:22Z
dc.date.available2023-01-17T09:48:28Z
dc.date.available2023-05-16T11:56:28Z
dc.date.embargo2023-12-12
dc.date.issued2022-12-21
dc.identifier.doi10.1557/s43580-022-00453-6
dc.identifier.issn2731-5894
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40975
dc.publisherSPRINGER HEIDELBERG
dc.source.beginpage1274
dc.source.endpage1278
dc.source.issue36
dc.source.journalMRS ADVANCES
dc.source.numberofpages5
dc.source.volume7
dc.title

Parasitic side channel formation due to ion implantation isolation of GaN HEMT

dc.typeJournal article
dspace.entity.typePublication
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