Publication:

Influence of fin width on the total dose behavior of p-channe bulk MuGFETs

Date

2010
Journal article
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-5218-4046
cris.virtualsource.department715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.orcid715a9ada-0798-46d2-a8ca-4775db9a8e46
dc.contributor.authorPut, Sofie
dc.contributor.authorSimoen, Eddy
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVan Uffelen, Marco
dc.contributor.authorLeroux, Paul
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-18T20:40:17Z
dc.date.available2021-10-18T20:40:17Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17860
dc.source.beginpage243
dc.source.endpage245
dc.source.issue3
dc.source.journalIEEE Electron Device Letters
dc.source.volume31
dc.title

Influence of fin width on the total dose behavior of p-channe bulk MuGFETs

dc.typeJournal article
dspace.entity.typePublication
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