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Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides

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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-3763-2098
cris.virtual.orcid0000-0002-3742-9017
cris.virtual.orcid0000-0002-4157-1956
cris.virtual.orcid0000-0002-8062-3165
cris.virtual.orcid0000-0002-4609-5573
cris.virtual.orcid0000-0002-5218-4046
cris.virtual.orcid0000-0002-1484-4007
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-3833-5880
cris.virtualsource.department2fcc3f32-b96b-4ece-a34c-e0dd87c237c9
cris.virtualsource.department8453626e-0277-4da2-913a-9d997d2a144f
cris.virtualsource.departmentf9b525b6-66d0-4e40-8dd4-46fc733e347c
cris.virtualsource.departmentc807a03a-358d-4274-b622-dee889a60454
cris.virtualsource.department8b84673b-878f-4c3b-959d-b7cdae2d70d9
cris.virtualsource.department715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.department812f2909-a81b-4593-9b32-75331cffa35c
cris.virtualsource.department7f1ede79-794c-4ed6-ba2c-ed759bfbcc5a
cris.virtualsource.department6b87853a-fb57-4bc6-ae03-fa067cb9a855
cris.virtualsource.orcid2fcc3f32-b96b-4ece-a34c-e0dd87c237c9
cris.virtualsource.orcid8453626e-0277-4da2-913a-9d997d2a144f
cris.virtualsource.orcidf9b525b6-66d0-4e40-8dd4-46fc733e347c
cris.virtualsource.orcidc807a03a-358d-4274-b622-dee889a60454
cris.virtualsource.orcid8b84673b-878f-4c3b-959d-b7cdae2d70d9
cris.virtualsource.orcid715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.orcid812f2909-a81b-4593-9b32-75331cffa35c
cris.virtualsource.orcid7f1ede79-794c-4ed6-ba2c-ed759bfbcc5a
cris.virtualsource.orcid6b87853a-fb57-4bc6-ae03-fa067cb9a855
dc.contributor.authorMohammed, Mazharuddin
dc.contributor.authorVerhulst, Anne
dc.contributor.authorVerreck, Devin
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSoree, Bart
dc.contributor.authorVan de Put, Maarten
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-23T12:56:40Z
dc.date.available2021-10-23T12:56:40Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27027
dc.identifier.urlhttp://aip.scitation.org/doi/10.1063/1.4972482
dc.source.beginpage245704
dc.source.issue24
dc.source.journalJournal of Applied Physics
dc.source.volume120
dc.title

Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides

dc.typeJournal article
dspace.entity.typePublication
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