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Properties of wide bandgap materials as tunnel barriers for spin injection from spin polarised Heuslers into narrow gap semiconductors
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Properties of wide bandgap materials as tunnel barriers for spin injection from spin polarised Heuslers into narrow gap semiconductors
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Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Clowes, S.K.
;
Zhang, T.
;
Branford, W.R.
;
Bugoslavsky, Y.
;
Cohen, L.F.
;
Van Roy, Wim
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1845
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Acq. date: 2025-12-16
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Metrics
Views
1845
since deposited on 2021-10-15
1
last month
Acq. date: 2025-12-16
Citations