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Properties of wide bandgap materials as tunnel barriers for spin injection from spin polarised Heuslers into narrow gap semiconductors

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dc.contributor.authorClowes, S.K.
dc.contributor.authorZhang, T.
dc.contributor.authorBranford, W.R.
dc.contributor.authorBugoslavsky, Y.
dc.contributor.authorCohen, L.F.
dc.contributor.authorVan Roy, Wim
dc.contributor.imecauthorVan Roy, Wim
dc.contributor.orcidimecVan Roy, Wim::0000-0003-3232-1987
dc.date.accessioned2021-10-15T12:54:32Z
dc.date.available2021-10-15T12:54:32Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8703
dc.source.conferenceCondensed Matter and Materials Physics Conference - CMMP04
dc.source.conferencedate4/04/2004
dc.source.conferencelocationWarwick UK
dc.title

Properties of wide bandgap materials as tunnel barriers for spin injection from spin polarised Heuslers into narrow gap semiconductors

dc.typeOral presentation
dspace.entity.typePublication
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