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Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling

Date

2008
Proceedings Paper
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dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorYang, Lijun
dc.contributor.authorNguyen, Duy
dc.contributor.authorLoo, Roger
dc.contributor.authorConard, Thierry
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2021-10-17T11:09:16Z
dc.date.available2021-10-17T11:09:16Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14537
dc.source.conference4th International Workshop on New Group IV Semiconductor Nanoelectronics
dc.source.conferencedate25/09/2008
dc.source.conferencelocationSendai Japan
dc.title

Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling

dc.typeProceedings paper
dspace.entity.typePublication
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