Publication:

DC Reliability study of high-k GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers

Date

2024
Proceedings Paper
https://doi.org/10.1109/IRPS48228.2024.10529379
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dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorAlian, AliReza
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorFranco, Jacopo
dc.contributor.authorYadav, Sachin
dc.contributor.authorYu, Hao
dc.contributor.authorRathi, Aarti
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorO'Sullivan, B. J.
dc.contributor.imecauthorAlian, A.
dc.contributor.imecauthorSibaja-Hernandez, A.
dc.contributor.imecauthorFranco, J.
dc.contributor.imecauthorYadav, S.
dc.contributor.imecauthorYu, H.
dc.contributor.imecauthorRathi, A.
dc.contributor.imecauthorPeralagu, U.
dc.contributor.imecauthorChasin, A.
dc.contributor.imecauthorParvais, B.
dc.contributor.imecauthorCollaert, N.
dc.date.accessioned2024-08-16T18:29:16Z
dc.date.available2024-08-16T18:29:16Z
dc.date.issued2024
dc.identifier.doi10.1109/IRPS48228.2024.10529379
dc.identifier.eisbn979-8-3503-6976-2
dc.identifier.isbn979-8-3503-6977-9
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44335
dc.publisherIEEE
dc.source.conferenceInternational Reliability Physics Symposium (IRPS)
dc.source.conferencedate2024-04-14
dc.source.conferencelocationGrapevine
dc.source.numberofpages9
dc.subject.keywordsRELAXATION
dc.title

DC Reliability study of high-k GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers

dc.typeProceedings paper
dspace.entity.typePublication
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