Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics

cris.virtual.department	#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid	0000-0002-2737-8391
cris.virtualsource.department	9001e047-1419-49a0-b570-77d3b3d796f9
cris.virtualsource.orcid	9001e047-1419-49a0-b570-77d3b3d796f9
dc.contributor.author	Everaert, Jean-Luc
dc.contributor.author	Rosseel, Erik
dc.contributor.author	Dekoster, Johan
dc.contributor.author	Pap, Aron
dc.contributor.author	Maszaros, Albert
dc.contributor.author	Kis-Szabo, Krisztian
dc.contributor.author	Pavelka, Tibor
dc.contributor.imecauthor	Everaert, Jean-Luc
dc.contributor.imecauthor	Rosseel, Erik
dc.contributor.imecauthor	Dekoster, Johan
dc.date.accessioned	2021-10-18T16:16:55Z
dc.date.available	2021-10-18T16:16:55Z
dc.date.embargo	9999-12-31
dc.date.issued	2010
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/17085
dc.source.beginpage	122906
dc.source.issue	12
dc.source.journal	Applied Physics Letters
dc.source.volume	96
dc.title	Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics
dc.type	Journal article
dspace.entity.type	Publication
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