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Leakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrology
Publication:
Leakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrology
Date
2007
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Faifer, V.N.
;
Schroder, D.K.
;
Current, M.I.
;
Clarysse, Trudo
;
Timans, P.J.
;
Zangerle, T.
;
Vandervorst, Wilfried
;
Wong, T.M.H.
;
Moussa, Alain
;
McCoy, S.
;
Gelpey, J.
;
Lerch, W.
;
Paul, S.
;
Bolze, D.
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1961
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1961
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations