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Leakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrology

Date

2007
Proceedings Paper
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dc.contributor.authorFaifer, V.N.
dc.contributor.authorSchroder, D.K.
dc.contributor.authorCurrent, M.I.
dc.contributor.authorClarysse, Trudo
dc.contributor.authorTimans, P.J.
dc.contributor.authorZangerle, T.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorWong, T.M.H.
dc.contributor.authorMoussa, Alain
dc.contributor.authorMcCoy, S.
dc.contributor.authorGelpey, J.
dc.contributor.authorLerch, W.
dc.contributor.authorPaul, S.
dc.contributor.authorBolze, D.
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMoussa, Alain
dc.date.accessioned2021-10-16T16:05:32Z
dc.date.available2021-10-16T16:05:32Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12146
dc.source.beginpage246
dc.source.conferenceFrontiers of Characterization and Metrology for Nanoelectronics: 2007 (NIST)
dc.source.conferencedate27/03/2007
dc.source.conferencelocationGaithersburg, MD USA
dc.source.endpage250
dc.title

Leakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrology

dc.typeProceedings paper
dspace.entity.typePublication
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