Publication:

Charge trapping and mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

Date

2003
Meeting abstract
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dc.contributor.authorYoung, C.D.
dc.contributor.authorKerber, Andreas
dc.contributor.authorHou, T.H.
dc.contributor.authorCartier, E.
dc.contributor.authorBrown, G.A.
dc.contributor.authorBersuker, G.
dc.contributor.authorKim, Y.
dc.contributor.authorLim, C.
dc.contributor.authorGutt, J.
dc.contributor.authorLysaght, P.
dc.contributor.authorBennett, J.
dc.contributor.authorLee, C.H.
dc.contributor.authorGopalan, S.
dc.contributor.authorGardner, M.
dc.contributor.authorZeitzoff, P.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMurto, R.W.
dc.contributor.authorHuff, H.R.
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-10-15T07:56:32Z
dc.date.available2021-10-15T07:56:32Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8430
dc.source.conference204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
dc.title

Charge trapping and mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

dc.typeMeeting abstract
dspace.entity.typePublication
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