Publication:

Epitaxial strained silicon passivation of the Ge/high-k interface in germanium pMOSFET

Date

 
dc.contributor.authorLeys, Frederik
dc.contributor.authorMitard, Jerome
dc.contributor.authorMartens, Koen
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorHoussa, Michel
dc.contributor.authorBrunco, D.P.
dc.contributor.authorKaczer, Ben
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorLoo, Roger
dc.contributor.authorMeuris, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T08:18:49Z
dc.date.available2021-10-17T08:18:49Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14020
dc.source.conference4th International SiGe Technology and Device meeting
dc.source.conferencedate11/05/2008
dc.source.conferencelocationHsinchu Taiwan
dc.title

Epitaxial strained silicon passivation of the Ge/high-k interface in germanium pMOSFET

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
16826.pdf
Size:
172.88 KB
Format:
Adobe Portable Document Format
Publication available in collections: