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Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaNGaN interface

Date

2013
Journal article
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dc.contributor.authorMeneghini, Matteo
dc.contributor.authorBertin, Marco
dc.contributor.authorStocco, Antonio
dc.contributor.authordal Santo, Gabriele
dc.contributor.authorMarcon, Denis
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorChini, Alessandro
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.date.accessioned2021-10-21T10:01:36Z
dc.date.available2021-10-21T10:01:36Z
dc.date.issued2013
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22798
dc.identifier.urlhttp://apl.aip.org/resource/1/applab/v102/i16/p163501_s1
dc.source.beginpage163501
dc.source.issue16
dc.source.journalApplied Physics Letters
dc.source.volume102
dc.title

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaNGaN interface

dc.typeJournal article
dspace.entity.typePublication
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